Natural Type IIa Diamonds

UralAlmazInvest (UAI) is focused on development and small-batch production of components and devices based on IIa-type natural (ND) high-quality diamonds.

UAI offers high-technological diamond-based industrial and scientific products, including plates and windows with wide spectrum of parameters, as well as advanced optical and electronic diamond devices for the following applications:

Certified diamond substrates and plates for industrial and science applications with unique thermo, mechanical, optical, electric and radiation resistance parameters;
Wide choice of certified diamond windows and optical plates with wavelength range from 0.2 up to 100 microns;
Heat-spreaders and heat-conducting substrates with thermal conductivity up to 22W/cm x°C for high-power microwave devices and laser diodes, MCM for integrated circuits, etc.

Properties (click here for detailed properties pdf)

Lattice constant (Е)
3.567

Density (g/cm³)
3.52

Thermal conductivity (W/cm·K)
20 ¸ 25

Dielectric constant
5.68

Emission wavelength, µm
0.23

Refractive index
2.41

Bandgap (eV)
5.47

Mobility (cm²/V·s)

Electrons
2500

Holes
2100

Saturation velocity (10⁷ cm/s)
2.7

Breakdown field (10⁷ V/cm)
2

Radiation resistance
very stable

Heat resistance (°C)
>1000

Hardness (Knoop), (GPa)
80

Energy to create e/h pair, (eV)
13.6

Diamond Optical Components

UAI offers double or single-side polished, plane-parallel discs made of specially selected IIa-type diamonds. Substrates and plates with different dimensions and shapes, with fully documented parameters, including geometric, electrophysical and optical values, with or without specific crystallographic orientation, and also in metal-mounted modules or with metal deposited composition or single layer.

Typical Parameters and Options

Morphological and geometric data

Deviation from flatness (for working surface)

not less than λ/5 for small size windows
(depends on window size)

Surface roughness

less than 40 nm
(profile-trace data is optional)

Deviation from a parallelism of base surfaces

less than 5 arc degree
(digital measurements data are possible by request)

Configuration of edges

laser-cut, mechanically cut or not configured
(by order - with natural shaped edges)

Typical tolerances

Sizes in a plane of a surface

± 0.10 mm

Thickness

0.25 mm and more

± 0.05 mm

150 ¸ 200 µm

± 0.025 mm

super-thin (< 100 µm)

by request

ultra-thin (< 50 µm)

by request

Crystallographic orientation

[100] or [110] or [111]

± 3°

Optional characteristics (by request):
electro-physical-, optical- and thermo- parameters

IR-transmission spectra

in 0.25 ¸ 6.0 µm range
(optional as digital measurements data)

Electrical resistance

Between top and bottom
(optional as digital measurements data)

Cathodoluminescence data

CL-spectra &/or topogram CL-image
(optional as digital measurements data)

Thermal conductivity

integrated value
(optional as digital measurements data)

UV-edge absorption data

in 0.19 ¸ 0.35 µm range
(optional as digital measurements data)

UV-induced luminescence data

optional as digital measurements data

UAI uses precise technological and analytical equipment to control over the whole technological cycle.

Diamond Classification
Diamonds are classified depending on the amount of nitrogen contained within material and whether it is held as an interstitial or substitutional defect.

type Ia

Nitrogen present up to levels of 4000¸ 4500 ppm (0.3 wt %), incorporated in interstitial sites or aggregates.

type Ib

500 ppm of nitrogen (0.06 wt %). Incorporated as substitutional point defects. Most of synthetic diamonds are of this type.

type IIa

Effectively free of nitrogen impurity. Very rare in nature, these diamonds have enhanced optical and thermal properties.

type IIb

Extremely rare in nature; p-type semiconductor due to boron defects.

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ELECTRO OPTICAL COMPONENTS, Inc.

Natural Type IIa Diamonds

ELECTRO OPTICAL COMPONENTS, Inc.

Diamond Classification Diamonds are classified depending on the amount of nitrogen contained within material and whether it is held as an interstitial or substitutional defect.
type Ia	Nitrogen present up to levels of 4000¸ 4500 ppm (0.3 wt %), incorporated in interstitial sites or aggregates.
type Ib	500 ppm of nitrogen (0.06 wt %). Incorporated as substitutional point defects. Most of synthetic diamonds are of this type.
type IIa	Effectively free of nitrogen impurity. Very rare in nature, these diamonds have enhanced optical and thermal properties.
type IIb	Extremely rare in nature; p-type semiconductor due to boron defects.