LEDs - Light Emitting Diodes - Optoelectronics
|
High Power LEDs at 635 nm
| Name of component |
Characteristic
wave length (nm) |
Power (mW)
at IF=100mA |
Luminescent intensity
(mcd) at IF=100mA |
Peculiarity |
| ELI-635-095 |
630 |
11 |
520 |
TO-39 housing
4 power chips
of 1 mm² each |
|
LEDs in Housing for Fiber Coupling
|
Click here for pdf data sheet |
| Name of component |
Wave length (nm) |
Power (mW)
at IF=20mA |
| ELD-525-994 |
525 |
1.6 |
| ELD-640-994 |
640 |
2.6 |
| ELD-660-994 |
660 |
5.0 |
| ELD-880-994 |
880 |
6.0 |
|
|
High Brightness LEDs
|
High Brightness
LED in 3 mm standard housing |
| visible area |
|
infrared area |
|
Name of component |
Wave length (nm) |
Luminescent intensity (mcd)
at IF=20 mA |
Name of component |
Wave length (nm) |
Luminescent intensity (mcd)
at IF=50 mA/*100 mA |
| ELD-620-333 |
625 |
2000 |
ELD-700-344 |
700 |
10 |
| ELD-630-333 |
635 |
1500 |
ELD-740-344 |
740 |
10 |
| ELD-670-333 |
670 |
330 |
ELD-770-344 |
770 |
10 |
| |
ELD-810-344 |
810 |
28* |
|
ELD-880-525 |
870 |
32* |
|
ELD-920-335 |
920 |
35* |
| ELD-920-344 |
920 |
32* |
|
ELD-940-335 |
940 |
25* |
| ELD-940-344 |
940 |
23* |
| |
|
|
|
High Brightness
LED in 5 mm standard housing |
| visible area |
|
infrared area |
|
Name of component |
Wave length (nm) |
Luminescent intensity (mcd)
at IF=20mA |
Name of component |
Wave length (nm) |
Luminescent intensity (mcd)
at IF=50mA/*100mA |
| ELD-450W-523 |
450 |
4200 |
ELD-700-524 |
700 |
10 |
| ELD-465-523-2 |
465 |
1750 |
ELD-740-524-3 |
740 |
10 |
| ELD-625-523 |
625 |
4000 |
ELD-770-524-1 |
770 |
10 |
| ELD-635-523 |
635 |
1800 |
ELD-810-525-1 |
810 |
28* |
| ELD-670-524 |
670 |
400 |
ELD-870-525 |
870 |
32* |
| |
ELD-920-525 |
920 |
30* |
| ELD-940-525 |
940 |
23* |
|
|
Jumbo LEDs
| Jumbo LED in
screwed housing |
| Name of component |
Wave length (nm) |
Power (mW)
at IF=100mA |
|
| ELJ-595-225B |
595 |
20 |
 |
 |
|
- radiation angle: 20o
- 40o, 120o and 140o
suitable
- 6 single LED chips |
|
| ELJ-640-225B |
640 |
120 |
| |
|
Power (mW)
at IF=250mA |
| ELJ-810-225B |
810 |
225 |
|
ELJ-870-629 |
870 |
1900 |
| ELJ-880-228B |
880 |
250 |
| ELJ-920-228B |
920 |
250 |
|
|
3 Color LEDs
| Name of component |
Wave length (nm) |
Leistung (mW) bei IF=20mA
468nm 525nm 644nm |
Gehäuse, Besonderheiten |
| ELD-RGB-593-1 |
468, 525, 644 |
3 2 3 |
3 Chips in 5 mm Gehäuse,
klar |
| ELD-RGB-593-2 |
468, 525, 644 |
3 2 3 |
3 Chips in 5 mm Gehäuse,
milchig |
|
|
GaP & AlGaAs Photo Diodes
| Name of component |
Wave length of
max.
sensitivity (nm) |
typ.
sensitivity (A/W) |
act. areas and housings |
| EPD-440 |
440 |
0.12 |
0.7 mm2, 1.2 mm2
im TO-46;
4.8 mm2, 10.9 mm2 im TO-39 |
| EPD-470 |
470 |
0.18 |
0.6 mm2, 1.2 mm2
im TO-46; 4.8 mm2 im TO-39 |
| EPD-550-0 |
550 |
0.21 |
0.12 mm2, 0.6 mm2,
4.8 mm2 im TO-46 |
| EPD-550-1/0.9 |
550 |
0.25 |
SMD 1206 |
| EPD-550-1/0.5 |
550 |
0.42 |
SMD 1206 |
| EPD-740 |
740 |
0.12 |
0.6 mm2, PLCC-2
(TOP-LED) |
|
|
LED Point Light Collimator Module Selector
| LED point light sources are an alternative
to the low-power laser diode-collimators and laser
diode-modules. They do not require any elaborate control
electronics. Unlike lasers they do not show any disturbing “Speckle” distortions in the beam.
The combination of the LED point sources with the LED-1115
collimator produces a high-quality beam with a very
homogeneous radiation profile, good for illumination
applications like cameras. It can be used for
marking application out to several meters.
|
 LED-1115
collimator |
|
Light Sensor Circuits
|
Sensor application
Click Type # for pdf data sheet |
| Type |
Description |
Case |
|
iC-LQ |
- pulse sensor and intermittent light sensor with
current output
- active photo diode area 0.9 mm2
- integrated belt passing filter with 250 kHz center
frequency
- very high low-frequency suppression / synchronous light
suppression
- transmission characteristics independent from synchronous
light
- very low current input of 5 V also in case of synchronous
light |
TO18-4L
with lensTO18-4F
mit Planfenster |
|
iC-VP |
- light sensor with threshold value switch
- active photo diode area 400x400 µm2
- adjustable switching threshold
- short indexing time
- supply voltage 4.5...16 V
- CMOS/LSTTL compatible output/exit
|
TO18-4L
with lensTO18-4F
mit Planfenster |
|
iC-OC |
- dual photo diode with internal integrator
- active area 2x (0.97 x 0.47mm2)
- Pitch 1mm
- supply voltage 5 V
- integration time to be adjusted from outside
- TTL-/CMOS compatible logic entrances (inputs) and exits
(outputs) |
Chip on Board |
|
iC-OD |
- optical position sensor (PSD)
- low noise current amplifier with integrated lateral photo
diode
- active area 2.6 x 0.88 mm2
- supply voltage 5...12 V
- analog exits (outputs) as current source
- high synchronous light suppression
|
Chip on Board TO5-4F |
|
iC-ODL |
- optical position sensor (PSD)
- low noise current amplifier with integrated lateral photo
diode
- active area 8.42 x 0.87 mm²
- supply voltage 5...12 V
- analog exits (outputs) as current source
- high synchronous light suppression |
|
|
iC-LA |
- optical line sensor with 64 active pixels in a
dimension of
183 µm x 200 µm in a 200 µm scanning
- integrated amplifiers with track-and-hold
- internal temperature sensor
- internal bi-directional shift-register |
|
|
iC-LF 1401 |
- optical line sensor with 128 active pixels in a
dimension of
56 µm x 200 µm in a 63.5 µm scanning (400 dpi)
- integrated light-voltage transformation with reoperating
sample-and-hold-shifting
- high sensitivity and regularity (wave length)
- high cycle rate up to 5 MHz |
|
|
5 V voltage transformer |
| Type |
Description |
Case |
| iC-WD |
- input voltage 8...30 V DC
- two reoperating 5 V-longitudinal regulators with an output
current of 200 mA and 25 mA
- low residual nonlinearity (small capacities in µF-range)
- internal reference voltage
- transforming frequence over the range of audibility |
SO8 |
|
