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IBSG Mid-infrared (Mid-IR) Photodiodes / Detectors

IBSG Co. Ltd. was founded by several leading researchers from the Ioffe Physico-Technical Institute in 1992 and specialized in developing and manufacturing of optoelectronic devices for mid-infrared spectral range. They provide the complete technological cycle including heterostructure growth using liquid phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD), photolithography, assembling, characteristics testing and producing of related electronic devices.

IBSG produces the full line of light emitting diodes, laser diodes and photodiodes for mid-infrared spectral range 1600-5000 nm. In addition to a wide range of standard products they offer custom designed solutions for different purposes. You can find use of IBSG products in detection systems for ecological monitoring, on-line technological process control, medical diagnostic and many other applications.

IBSG Photodiodes are designed for detecting radiation in the Mid-Infrared (Mid-IR)spectral range from 1500 to 3800 nm. Heterostructures with the Indium Gallium Arsenide Antimonide (InGaAsSb) sensitive layer and the Aluminium Gallium Arsenide Antimonide (AlGaAsSb) "window" are grown on Gallium Antimonide (GaSb) substrates.

The Photodiodes are mounted in standard TO-18 packages and for TE cooled versions in TO-5 packages. They have photosensitive areas with diameter of 0.2 – 2.0 mm. They can be used with high frequency modulated laser or LED emission because of their fast response time.

Related products:

IBSG Mid-IR Photodiodes

Part
Number
Wavelength
nm
Responsivity
A/W
Detectivity
x10
10
Active Area
mmØ
Substrate Reflector Window TE
Cooler
Package
PD23-02 2300 - 2350 1.0 5.0 0.2 InGaAsSb/
GaSb
  Option   TO-18
PD23-02-PR Yes  
PD24-02 2380 - 2410 1.0 6.0 0.2 InGaAsSb/
GaSb
Option Option   T0-18
PD24-03 2370 - 2420 1.0 5.0 0.3 InGaAsSb/
GaSb
  Option    TO-18
PD24-03-PR Yes  
PD24-03-TEC 2320 - 2400 20 Option Yes TO-5
PD24-05 2380 - 2430 1.0 5.0

 

2.0 InGaAsSb/
GaSb
  Option   TO-18
PD24-05-PR Yes  
PD24-05-TEC 2320 - 2400 20 0.5 Option Yes TO-5
PD24-10 2380 - 2430 1.0 5.0 1.0 InGaAsSb/
GaSb
  Option   TO-18
PD24-10-PR Yes
PD24-20-TEC  2350 - 2400 1.0 19 2.0 InGaAsSb/
GaSb
Option Option Yes TO-5
PD25-03-TEC 2530 - 2580 1.0 3.0 0.5 InGaAsSb/
GaSb
   Option   TO-18
PD25-05 2530 - 2580 1.0 3.0 2.0 InGaAsSb/
GaSb
  Option   TO-18
PD25-05-PR Yes  
PD36-02-TEC 1500 - 3800 1.1 0.8 0.2     Sapphire Yes TO-5
PD36-03-TEC 2500 - 3300 0.3
PD48-03-NS & -PR 2500 - 4900     0.3   Option Option   TO-18
PD48-03-WS-& -PR 800 - 4800     0.3    
PD48-05-NS & -PR 2500 - 4900     0.5    
PD48-05-WS-& -PR 800 - 4800     0.5    

 

PD23, 24…48 Chips All

IBSG Photodiode Amplifiers
 

Part Number Photodiodes
AM-07M Photodiode Amp PDXX-YY, PDXX-YY-PR
AMT-07M Photodiode Amp with TEC Control PDXX-YY-TEC

Technical Notes:

Photodiodes with 1.3 to 2.4um Response: Semiconductor Heterostructures
Spectral Response Applications
Voltage Dependence Carbon Dioxide (CO2) Detection
Temperature Dependence Water (H2O) Detection
Photodiodes with 2.4 to 3.8um Response: Methane (CH4) Detection
Spectral Response  
Voltage Dependence  
Temperature Dependence