Silicon Photodiodes

IFW Optronics offers a variety of silicon photodiode options:
  • Silicon Photodiodes with an Integrated Low Noise JFET Amplifier
  • Quadrant Photodiodes
  • UV-NIR Spectroscopy Photodiodes combining Silicon and Silicon Carbide detectors
Silicon Photodiodes with Integrated Low Noise JFET Amplifier
Part
Number		 Active Area
mm2		 Integrated
Amplifier		 Spectral range
nm		 Package Feedback
Resistor
JI 546 4.8 JFET Low Noise 400-1100 TO-5 1 M Ω
JI 547 4.8 10 M Ω
JI 548 4.8 100 M Ω
JI 447L* & 448L*
* Delatic Staggered Responsivity		 4.8 10, 100 M Ω
JI 576, 577 & 578 7 1, 10, 100 M Ω

 

Quadrant Photodiodes
Part
Number		 Active Area
Diameter
mm		 Individual
Quadrant Area
mm2		 Spectral
Range - nm		 Package

JQ 5P

2.5

1.25

400 - 1100

TO-5

JQ 20P

5.0

5.0

TO-8

JQ 50P

7.9

12.5

 

UV-NIR Spectroscopy Photodiodes 
Part
Number		 Active Area
mm2		 Integrated
Amplifier/ TEC		 Spectral Range
nm		 Package

JI 100 EI 8UVT1

 100 Yes / Yes 190 - 1100 Special

 

 

ELECTRO OPTICAL COMPONENTS, Inc.

IFW Optronics high performance ultraviolet photodiodes using silicon carbide (SiC) as the active detector element are distributed exclusively in North America by EOC, Inc.

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ELECTRO OPTICAL COMPONENTS, Inc. is the exclusive North American  distributor for FEMTO, IFW Optronics GmbH, INNO-Spec GmbH, Laser Beam Products, LEYSOP, NOC, Frankfurt Laser Co., IMM Photonics GmbH, INTEX, Micro-Hybrid Electronics GmbH, SDS (Systems Development & Solutions), UralAlmazInvest, Oehler & Fischer AG and Wavelength Technology.