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Unique Features

3×3 mm² SiPMs in ultra-compact, quadratic, tileable BGA package

  • Ultra low noise
  • Highest photon detection efficiency
  • Excellent timing properties
  • Fastest recovery time
  • Non-magnetic

Operating Parameters

ParameterTyp.
Breakdown Voltage (VBD) at 21°Cmin 28.75 V, max. 30.25 V
Breakdown Voltage Variation per Reel±0.125 V
Recommended Overvoltage (VOV)1.0 V – 6.5 V (max. 7.5 V)

Electrical and Optical Characteristics

Parameter @ 5.0 V (VOV)PM3315-WLPM3335-WLPM3347-WL
Photo Detection Efficiency at 430 nm29%41%47%
Dark Count Rate45 kHz/mm²60 kHz/mm² 85 kHz/mm²
Crosstalk Probability14%10%18%
Afterpulsing Probability3%3%3%
Recovery Time τ (at 1 Ω load)7 ns35 ns95 ns

Photo Detection Efficiency vs Wavelength

Absolute Photo Detection Efficiency (PDE) of the WL Series SiPMs versus photon wavelength. The peak PDE is at 430 nm. The plot shows the values at 5.0 V overvoltage.

Photo Detection Efficiency vs Overvoltage

Absolute Photo Detection Efficiency (PDE) of the WL Series SiPMs versus overvoltage. Measured at 430 nm.

Dark Count Rate

Typical Dark Count Rate (DCR) of the WL Series SiPMs. The DCR is significantly improved compared to WB Series.

Crosstalk Probability

Typical Crosstalk Probability (CTP) of the WL Series SiPMs.

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