3×3 mm² SiPMs in ultra-compact, quadratic, tileable BGA package
- Ultra low noise
- Highest photon detection efficiency
- Excellent timing properties
- Fastest recovery time
|Breakdown Voltage (VBD) at 21°C||min 28.75 V, max. 30.25 V|
|Breakdown Voltage Variation per Reel||±0.125 V|
|Recommended Overvoltage (VOV)||1.0 V – 6.5 V (max. 7.5 V)|
Electrical and Optical Characteristics
|Parameter @ 5.0 V (VOV)||PM3315-WL||PM3335-WL||PM3347-WL|
|Photo Detection Efficiency at 430 nm||29%||41%||47%|
|Dark Count Rate||45 kHz/mm²||60 kHz/mm²||85 kHz/mm²|
|Recovery Time τ (at 1 Ω load)||7 ns||35 ns||95 ns|
Photo Detection Efficiency vs Wavelength
Absolute Photo Detection Efficiency (PDE) of the WL Series SiPMs versus photon wavelength. The peak PDE is at 430 nm. The plot shows the values at 5.0 V overvoltage.
Photo Detection Efficiency vs Overvoltage
Absolute Photo Detection Efficiency (PDE) of the WL Series SiPMs versus overvoltage. Measured at 430 nm.
Dark Count Rate
Typical Dark Count Rate (DCR) of the WL Series SiPMs. The DCR is significantly improved compared to WB Series.
Typical Crosstalk Probability (CTP) of the WL Series SiPMs.