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These infrared radiation sources are pulsable thermal emitters with a near black-body emittance. They offer:

  • Patented nanotechnology achieves higher efficiency.
  • Patented emitter set-up made of a high-melting metal, the free-standing monolithic radiating element and the nanostructured emitter surface.
  • Lower element temperature of 600°C increases lifetime.

The emitters are:

  • More stable
  • Less or no drift
  • A lot more power
  • A lot less noise (very important)
  • All windows are hermetically sealed (Sapphire, CaF2 and BaF2 windows)

Numerous performance advantages are achieved in many applications:

  • SMD emitters are great for many projects where size and power are issues (portable devices and others).
  • High power applications (TO39 and TO8 packages) where you can get more power out with the same or less power in.
Product Element
Area
EmissivityElement
Temp.
Max Optical
Power
Modulation
Frequency
Wavelength
Range
PackageSoldered
Windows
Collimator
Basic Series (with Integrated Reflector)
EOC-IRE-550R11 mm2 > 0.8600°C @ 650mW up to 200mW 4 Hz 2 - 12μm TO-39/5
EOC-IRE-550R-C 11 mm2 > 0.8600°C @ 650mWup to 200mW 4 Hz 2 - 12μm TO-39/5Yes
SMD Series
EOC-IRE-20SMD0.24 mm2> 0.9700°C @ 175mWup to 20mW10 Hz2 - 16μmSMD3Option
EOC-IRE-100SMD1mm2> 0.9600°C @ 290mWup to 50mW7 Hz2 - 16μmSMD3Option
Power Series (with Integrated Reflector)
EOC-IRE-2000R40 mm2> 0.9630°C @ 2.5Wup to 1W2.5 Hz2 - 16μm6mm H
TO-8
EOC-IRE-2000R-640 mm2> 0.9630°C @ 2.5Wup to 1W2.5 Hz2 - 16μm6mm H
TO-8
Sapphire
EOC-IRE-2000R-940 mm2> 0.9630°C @ 2.5Wup to 1W2.5 Hz2 - 16μm9mm HSapphire
EOC-IRE-2000R-C-BAF40 mm2> 0.9630°C @ 2.5Wup to 1W2.5 Hz2 - 16μmTO-8BaF2Yes
EOC-IRE-2000R-C-CAF40 mm2> 0.9630°C @ 2.5Wup to 1W2.5 Hz2 - 16μmTO-8CaF2Yes
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